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Enhanced infrared photoluminescence from Ge1-xSnx alloys

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Abstract

Ge1-xSnx alloys have recently attracted great research attention for new optoelectronic devices, especially efficient Si-based light emitters [1]. While Ge is an indirect semiconductor, its direct conduction band lies just 136.5 meV above the lowest conduction band at L pint in the Brillouin zone. This energy difference can be greatly reduced by alloying Ge with Sn, another group-IV element, leading to remarkably improved light-emitting efficiency. With a Sn composition of ~7%, direct-bandgap Ge1−xSnx alloys can be created [2] for laser gain media. In this paper, we present a study of photoluminescence (PL) from strained Ge1-xSnx films on Ge virtual substrate (VS) on Si wafer. The transparent carrier densities are also predicted.

© 2013 Japan Society of Applied Physics, Optical Society of America

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