Ultra-fast Processes in Optically Excited Ge2Sb2Te5 by Transient X-ray Diffraction Using a Free-Electron Laser

Kirill Mitrofanov; Paul Fons; Paul Fons; Kotaro Makino; Ryo Terashima; Alexander V. Kolobov; Junji Tominaga; Alessandro Giussani; Raffella Calarco; Henning Riechert; Tetsuo Katayama; Takahiro Sato; Kanade Ogawa; Tadashi Togashi; Makina Yabashi; Muneaki Hase; Muneaki Hase

doi:10.1364/JSAP.2014.17p_C4_5

JSAP-OSA Joint Symposia 2014 Abstracts
(Optica Publishing Group, 2014),
paper 17p_C4_5
•https://doi.org/10.1364/JSAP.2014.17p_C4_5

Ultra-fast Processes in Optically Excited Ge₂Sb₂Te₅ by Transient X-ray Diffraction Using a Free-Electron Laser

Kirill Mitrofanov, Paul Fons, Kotaro Makino, Ryo Terashima, Alexander V. Kolobov, Junji Tominaga, Alessandro Giussani, Raffella Calarco, Henning Riechert, Tetsuo Katayama, Takahiro Sato, Kanade Ogawa, Tadashi Togashi, Makina Yabashi, and Muneaki Hase

JSAP-OSA Joint Symposia 2014

Sapporo, Hokkaido Japan
17–20 September 2014
ISBN: 978-4-86348-443-6

From the session
Laser Photonics—XFEL and ultrafast optics— (17p_C4)

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K. Mitrofanov, P. Fons, K. Makino, R. Terashima, A. V. Kolobov, J. Tominaga, A. Giussani, R. Calarco, H. Riechert, T. Katayama, T. Sato, K. Ogawa, T. Togashi, M. Yabashi, and M. Hase, "Ultra-fast Processes in Optically Excited Ge2Sb2Te5 by Transient X-ray Diffraction Using a Free-Electron Laser," in JSAP-OSA Joint Symposia 2014 Abstracts, (Optica Publishing Group, 2014), paper 17p_C4_5.

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Abstract

The desire to go beyond the current limits of phase-change memory (PCM) maximum switching speed and energy consumption has lead to increased interest to the investigation of the ultra-fast processes in PCM materials [1]. We present the results of sub-picosecond resolution time-resolved x-ray diffraction studies of the laser-induced structural dynamics in Ge₂Sb₂Te₅ as a step towards the non-thermal switching in PCM.

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