Abstract

Ge/SiGe quantum-well (QW) systems have attracted increasing attention for Si-based integrated photonics [1]. With the features of type-I alignment at Г-valley, quasi-direct bandgap, and compatibility with Si-technology, photonic devices based on Ge/SiGe QW systems such as modulators [1] and photodetectors [2] have been demonstrated [1-2]. Unfortunately, the effects of compressive strain and quantum confinement significantly increase the direct bandgap energy from 0.8 eV to 0.88 eV, shifting the operation of these devices to ~1440 nm [1, 2]. To be compatible with the Erbium window of the telecommunication C-band (1530-1565 nm), the use of tensile strain is pro-posed [3]. In this paper, we show primary results on the development of photodetectors based on tensile-strained Ge/SiGe QWs for telecommunication C-band applications.

© 2015 Japan Society of Applied Physics, Optical Society of America