Abstract
Monolayer molybdenium disulfide (MoS2), one of promising 2 dimensional transition metal dichalcogenide materials, is mono-atomic semiconducting layer with visible wavelength emission, being actively studied for novel device application.1 However the CVD process where grains are separately grown from multiple scattered seeds is inevitably subjected to grain boundaries (GBs) between micro-size MoS2 grains, which was shown to affect the electrical and optical properties of MoS2 devices. Optical method of GB visualization of large area MoS2 would be convenient for the large-area and non-invasive inspection capability and also contribute to the understanding of the physical nature of GB in MoS2. photoluminescence (PL) variation on GBs were also reported to occur on the GBs of MoS2 where PL reduction or enhancement were observed.2 While the PL variation along the GBs could provide a convenient optical visualization methodology for GB identification, it is still unclear whether the GB defined as the line discontinuity of atomic orientation of monolayer MoS2, can really cause the PL variation that is spatially extensive enough to be detected by routine micro-PL imaging having a few hundreds nanometer spatial resolution. To answer this question, not only PL imaging also other characterization process in a space-correlated manner that can fully describe the physical conditions that may cause the PL variation on the GBs must be carried out.
© 2015 Japan Society of Applied Physics, Optical Society of America
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