Abstract

Two dimensional dichalcogenide is a family of semiconductors, which exhibits both n-type and p-type conductivity with relatively high carrier mobility. In particular, the material group has an energy band gap, which leads to large on/off ratio when it is applied to thin film transistors (TFTs). Recently, exfoliated MoS₂ atomic thin layers have been fabricated into transistors which demonstrate excellent on/off current ratios and high carrier mobility. On the other hand, for large area formation of MoS₂ at low cost, the solution based process is promising. In this work, we report chemical solution process for MoS₂ on high-k dielectric films.

© 2016 Japan Society of Applied Physics, Optical Society of America