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  • JSAP-OSA Joint Symposia 2016 Abstracts
  • (Optica Publishing Group, 2016),
  • paper 16p_C301_6

Construction of vacuum referred binding energy diagram for understanding electronic structure of Ce3+ doped Gd3(Al,Ga)5O12 phosphors

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Abstract

Ce3+- doped Gd3Al5-xGaxO12 (GAGG) is a promising optical material for the scintillator [1]. It is known that the quantum efficiency (QE) of GAGG: Ce3+ becomes lower with increasing Ga content, x [2]. To understand optical properties of a phosphor, an electronic structure of host material should be investigated. Dorenbos suggested the construction method of the vacuum referred binding energy (VRBE) diagram [3]. This diagram can be constructed from the spectroscopy data of host exciton energy and charge transfer transition (CTS) of Eu3+. To determine those transition energies, we measured photoluminescence excitation (PLE) spectra and investigated relationship with QE using constructed VRBE diagram.

© 2016 Japan Society of Applied Physics, Optical Society of America

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