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LT-GaAs carrier lifetime evaluation using THz and optical probe techniques at different carrier injection levels

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Abstract

A typical photoconductive antenna (PCA)-based terahertz time-domain spectroscopy (THz-TDS) system has a mode-locked Ti: sapphire laser with a 100-MHz repetition rate as the pulsed excitation source. When an average probe beam power of 10 mW is focused to a 10-μm diameter on a semiconductor substrate, it yields an estimated fluence of around 130 μJ/cm2 impinging on the spot. The temporal resolution of the system highly depends on the speed of the PCA material. In this study, we evaluate the response of a low temperature-grown gallium arsenide, “LT-GaAs”, (grown at 210°C) layer at different carrier injection levels. LT-GaAs has been highly favored as a photoconductive material for THz applications due to its high carrier mobility, high dark resistivity and short carrier lifetimes [1].

© 2017 Japan Society of Applied Physics, Optical Society of America

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