Abstract

Energetic hot carrier injection from metal plasmonic structure to adjacent semiconductor lies at the center of the application of non-radiative decays, photochemical reactions and energy harvesting. Plasmonic hot-electron devices, till now, have been highly focused on a Schottky barrier structures to separate the energetic carriers before the thermalization. For instance, much efforts were putted in exploring high absorption structure with enough thin metal; enough thin compared to mean free path. However, interfacial engineering of the device; exploring a new device structure, have not been fully investigated.

© 2018 The Japan Society of Applied Physics