Abstract

Among the IV-VI group semiconductor nanostructures, GeS, SnS and PbS are important functional materials. SnS has been attracting wide attention due to its layered property and low toxicity. SnS has a narrow band gap and belongs to the layered semiconductors having orthorhombic structures, where Sn and S are tightly bonded in a layer and layers are bonded by weak Vanderwaals force [1]. In this work we report on the shift in band gap and enhanced photoluminescence in SnS nanostructures by increasing the Sn concentration.

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