2µm Electro-Absorption Optical Modulation using Strained Germanium-Tin on Silicon

Yun-Da Hsieh; Guo-En Chang

JSAP-OSA Joint Symposia 2018
(Optica Publishing Group, 2018),
paper 21a_211B_3

2µm Electro-Absorption Optical Modulation using Strained Germanium-Tin on Silicon

Yun-Da Hsieh and Guo-En Chang

JSAP-OSA Joint Symposia 2018

Nagoya Japan
18–21 September 2018
ISBN: 978-4-86348-694-2

From the session
Photonics Devices, Photonic Integrated Circuit and Silicon Phonics (4.2)

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Y. Hsieh and G. Chang, "2µm Electro-Absorption Optical Modulation using Strained Germanium-Tin on Silicon," in JSAP-OSA Joint Symposia 2018, (Optica Publishing Group, 2018), paper 21a_211B_3.

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Abstract

GeSn alloys have been recently considered as a new class of group-IV semiconductors for silicon photonics [1].

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