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  • JSAP-OSA Joint Symposia 2018
  • (Optica Publishing Group, 2018),
  • paper 21a_211B_4

GeSn Heterojunction Phototransistors on Silicon for High-Responsivity Short-Wave Infrared Photodetection

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Abstract

Si-based photodetectors (PDs) capable of operating in the short-wave infrared (SWIR) have attracted increasing research attention for a wide range of applications including fiber-optical communication, Lidar, and imaging [1,2].

© 2018 The Japan Society of Applied Physics

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