Detectivity Evaluation in SiGeSn/GeSn Multiple Quantum Well Photodetector

Prakash Pareek; Nishit Malviya; Vikram Palodiya; Jitendra K Mishra

JSAP-OSA Joint Symposia 2018
(Optica Publishing Group, 2018),
paper 21a_211B_5

Detectivity Evaluation in SiGeSn/GeSn Multiple Quantum Well Photodetector

Prakash Pareek, Nishit Malviya, Vikram Palodiya, and Jitendra K Mishra

JSAP-OSA Joint Symposia 2018

Nagoya Japan
18–21 September 2018
ISBN: 978-4-86348-694-2

From the session
Photonics Devices, Photonic Integrated Circuit and Silicon Phonics (4.2)

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P. Pareek, N. Malviya, V. Palodiya, and J. K. Mishra, "Detectivity Evaluation in SiGeSn/GeSn Multiple Quantum Well Photodetector," in JSAP-OSA Joint Symposia 2018, (Optica Publishing Group, 2018), paper 21a_211B_5.

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Abstract

The theoretical and experimental demonstration of direct band gap Germanium by incorporation of small amount of Tin (Sn) has paved the path of CMOS based optical interconnect [1-2].

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