Abstract
Identification and determination of impurities in modern semiconductors is one of the most challenging analytical problems in materials characterization. Total impurity concentrations rarely exceed 100 parts per billion and the chemical state of the impurity is central to it's effect on semiconductor performance. The detection of these impurities is beyond almost all available analytical methods. Quantitative determination of these impurities is nearly impossible.
© 1987 Optical Society of America
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