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LIBS on Silicon Oxide and Nitride Thin Films

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Laser induced breakdown spectroscopy (LIBS) has often been employed in the detection of energetic and other trace material. However, issues with uniform trace material deposition has not been fully understood so as to produce reference samples. In this work, LIBS is used to quantify the amount of oxygen, nitrogen rich material that can be ablated from uniform thin films of various thicknesses deposited on silicon substrate. Both single and double pulse LIBS were employed to study the amount of material removal and percent ionization as a function of trace and bulk material, in ambient atmosphere.

© 2010 Optical Society of America

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