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Au coated Femtosecond Laser based patterned non-stoichiometric Silicon Nitride films as SERS substrate

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Abstract

Non-stoichiometric silicon nitride films were fabricated using PECVD technique and patterned by a femtosecond laser, with a uniform gold film of 10nm thickness deposited over it by sputtering technique to explore its potential as SERS substrate.

© 2022 The Author(s)

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