A Simple Method for Characterizing the Dispersion of Epsilon-Near Zero Materials

Vinicius T. Alvarenga; Christiano J. S. de Matos

doi:10.1364/LAOP.2018.Th4A.28

Latin America Optics and Photonics Conference
OSA Technical Digest (Optica Publishing Group, 2018),
paper Th4A.28
•https://doi.org/10.1364/LAOP.2018.Th4A.28

A Simple Method for Characterizing the Dispersion of Epsilon-Near Zero Materials

Vinicius T. Alvarenga and Christiano J. S. de Matos

Latin America Optics and Photonics Conference 2018

Lima Peru
12–15 November 2018
ISBN: 978-1-943580-49-1

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Poster Session II (Th4A)

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V. T. Alvarenga and C. J. S. de Matos, "A Simple Method for Characterizing the Dispersion of Epsilon-Near Zero Materials," in Latin America Optics and Photonics Conference, OSA Technical Digest (Optica Publishing Group, 2018), paper Th4A.28.

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Abstract

We determine the dielectric function spectrum of a material in the 0-1 range, by analyzing the reflectance spectrum as a function of incidence angle. Results obtained for silicon carbide closely match data from the literature.

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