Abstract

Raman scattering is a versatile, non-destructive diagnostic of semiconductors and other materials, which can be used either in-situ after processing has occurred or, in many circumstances, in real-time during processing. By proper selection of lasers and optical design, Raman microprobe methods may be used to investigate sample stoichiometry, doping, crystallinity, stress, and temperature with micron or sub-micron lateral and depth resolution. The use of Raman microprobe techniques to analyze microstructures made by direct laser writing and to analyze microstructures heated by localized laser irradiation is described here.

© 1987 Optical Society of America