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Ultrafast Dynamics of SI-GaAs and LT-GaAs by Degenerate Pump-Probe Studies

P. T. Anusha, Surya P. Tewari, and S. Venugopal Rao

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Abstract

We present the measurements of carrier lifetimes in LT-GaAs, SI-GaAs using picosecond pump probe experiment at 800 nm performed in non-resonant conditions (photon energy > Eg of GaAs). The intensity dependent lifetimes are also investigated.

© 2013 Optical Society of America

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