Abstract
Spectral dependence, transient of photovoltage and photocurrent in p-i-n heterostructure InGaAs/GaAs with quantum wires embedded in the i-region were research in the temperature range from 77 K to 290 K. It was shown that the introduction of quantum wires leads to increased efficiency, the expansion of the spectral range photosensitivity and decrease the lifetime of nonequilibrium charge carriers.
© 2014 Optical Society of America
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