Electro-Absorption Modulators Based on Carrier Depletion in Epsilon-Near-Zero Films

Kaifeng Shi; Peichuan Yin; Zhaolin Lu

doi:10.1364/FIO.2016.JTh2A.144

Frontiers in Optics 2016
OSA Technical Digest (online) (Optica Publishing Group, 2016),
paper JTh2A.144
•https://doi.org/10.1364/FIO.2016.JTh2A.144

Electro-Absorption Modulators Based on Carrier Depletion in Epsilon-Near-Zero Films

Kaifeng Shi, Peichuan Yin, and Zhaolin Lu

Laser Science 2016

Rochester, New York United States
17–21 October 2016
ISBN: 978-1-943580-19-4

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Joint Poster Session II (JTh2A)

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K. Shi, P. Yin, and Z. Lu, "Electro-Absorption Modulators Based on Carrier Depletion in Epsilon-Near-Zero Films," in Frontiers in Optics 2016, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper JTh2A.144.

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Abstract

We report field effect electro-absorption (EA) modulators made of a thin epsilon-near-zero (ENZ) film sandwiched in a silicon or plasmonic waveguide. The significant bias-induced reduction of the absorption of the ENZ film may promise nanoscale modulators.

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