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Conferences > LS > 2017 > JW3A > JW3A.26

Modeling of Dark Count Rate of InGaAs/InP Single Photon Avalanche Photodiode Gated with Soliton Signal

Ahmed C. Kadhim, Susan K Earles, Ahmad S. Azzahrani, Muhammad Riaz, and Mano Rahul K Pakalapati

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Abstract

Dark count rate (DCR) of InGaAs/InP SPAD is modeled using soliton gating signal and compared to experimental counts of sinusoidal gating. Simulation results show that soliton has fewer effects of excess voltage on DCR.

© 2017 Optical Society of America

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