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Characteristic Temperature of a 2 µm InGaSb/AlGaAsSb Mode-locked Quantum Well Laser

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Abstract

Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.

© 2018 The Author(s)

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