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  • OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS)
  • OSA Technical Digest (Optica Publishing Group, 2020),
  • paper MM2C.2
  • https://doi.org/10.1364/MICS.2020.MM2C.2

High-power mid-infrared OP-GaAs OPO with controllable pulse repetition-rates and durations

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Abstract

We report a high-power, mid-infrared OP-GaAs OPO with controllable pulse repetition rates (100 MHz – 1 GHz) and adjustable pulse durations (~95 ps – ~1.1 ns). The highest average output power of 13.7 W was achieved from the OPO with 9.2 W signal (3.3 μm) and 4.5 W idler (4.9 μm).

© 2020 The Author(s)

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More Like This
CW mid-IR OPO based on OP-GaAs

Peter G. Schunemann, Leonard A. Pomeranz, Scott D. Setzler, Casey W. Jones, and Peter A. Budni
JSII_2_3 International Quantum Electronics Conference (IQEC) 2013

Mid-infrared, idler-resonant, picosecond OP-GaAs OPO with wide tunability and good beam quality

Q. Fu, L. Xu, S. Liang, P. C. Shardlow, D. P. Shepherd, S.-U. Alam, and D. J. Richardson
JW2A.44 CLEO: Applications and Technology (CLEO:A&T) 2019

20-50 kHz Mid-Infrared OP-GaAs OPO

Christelle Kieleck, Marc Eichhorn, Antoine Hirth, David Faye, and Eric Lallier
CTuII1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

High-repetition-rate, mid-infrared KTA-OPO at 3.44 μm

C. Rahlff, Y. Tang, W. Sibbett, and M. H. Dunn
CWF16 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

High-repetition rate infrared OPOs

H. Komine, J. M. Fukumoto, W. H. Long, and E. A. Stappaerts
CThC5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

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