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SESAMs for High-Power Ho-Doped Lasers at 2.1 um

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Abstract

We present a high-precision (<0.03%) nonlinear reflectivity and pump-probe characterization of InGaSb quantum-well-based SESAMs for high-power 2.1 μm Ho-doped lasers. The SESAMs have ~1% modulation depth, high saturation fluences and fast recovery times.

© 2022 The Author(s)

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