Abstract
A 257nm frequency doubled argon ion laser has been used to photo-dissociate Me2Cd (dimethylcadmium) together with tellurium precursors for low temperature epitaxial growth of CdTe(1). By projecting the laser onto the substrate surface, through a suitable mask, epitaxial growth can be achieved selectively within the illuminated regions following dissociation of the precursors by the UV radiation. However, a number of conditions must be satisfied in order to bring about selective area epitaxy and the following factors will be considered in this paper.
© 1989 Optical Society of America
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