Abstract

Although low energy ion bombardment has been employed in various contexts during epitaxial growth, such as enhanced dopant incorporationfl], surface cleaning during plasma-enhanced chemical vapor deposition[2], and direct low energy ion beam deposition[3,4], key questions about the interaction of low energy ions with growing surfaces remain unanswered. Improved understanding of ion-surface interactions during growth may yield additional elements of control over epitaxial film structure, strain state, and composition. Of particular interest for high quality epitaxial films is the identification of the regime in which surface and near-surface processes, such as surface diffusion and incorporation at growth sites, can be enhanced at low temperatures while avoiding or controlling damage in the deposited films.

© 1991 Optical Society of America