Electronically Induced Modifications of a-Si:H(P) Films by Scanning Tunneling Microscopy

E. Hartmann; E. Hartmann; F. Koch; F. Koch; R. J. Behm

doi:10.1364/MSBIP.1991.MB4

Microphysics of Surfaces: Beam-Induced Processes
Technical Digest Series (Optica Publishing Group, 1991),
paper MB4
•https://doi.org/10.1364/MSBIP.1991.MB4

Electronically Induced Modifications of a-Si:H(P) Films by Scanning Tunneling Microscopy

E. Hartmann, F. Koch, and R. J. Behm

The Microphysics of Surfaces: Beam-Induced Processes 1991

Santa Fe, New Mexico United States
11–13 February 1991
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E. Hartmann, F. Koch, and R. J. Behm, "Electronically Induced Modifications of a-Si:H(P) Films by Scanning Tunneling Microscopy," in Microphysics of Surfaces: Beam-Induced Processes, Technical Digest Series (Optica Publishing Group, 1991), paper MB4.

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Abstract

We report local electronic modifications of phosphorus-doped, hydrogenated amorphous silicon films [a-Si:H(P)], on a nm-scale, by use of a Scanning Tunneling Microscope.

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