Abstract
Thermally-grown silicon dioxide films 100 nm thick were implanted with 70 keV Ge ions at a dose of 2 x 1016/cm2. These samples were subsequently annealed for 40 min. at 600 °C, 800 °C, 1000 °C and 1200 °C. Plan-view transmission electron microscopy (TEM) was performed to obtain crystal size distributions. Photoluminescence spectra were measured at room-temperature, excited by 50 mW of 457 nm radiation from an Ar ion laser and spectra were acquired by a charged-coupled-device optical multichannel analyzer (OMA) spectrometer with optical fiber input. The system response of the OMA spectrometer was calibrated using a black body radiation source, and all spectra are corrected for the system response of the spectrometer.
© 1995 Optical Society of America
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