Abstract

Advanced material manufacturing often involves dry chemical etching. Most dry etching processes are done under nonequilibrium conditions at elevated temperature during irradiation by photons, electrons, and ions. While such processes are critical to semiconductor technologies, they are poorly understood -- a limitation that is easily rationalized since processing parameters are interrelated. This presentation will review recent investigations of the role of a subset of the processing parameters by focusing on etching of Si(100)-2×1 and GaAs(110) using halogens.

© 1995 Optical Society of America