Abstract

Indium phosphide and its related alloys are widely used in optoelectronic materials and devices. Using InP in strained-layer material systems presents a way of producing nanostructures. From growth simulations of InAs/GaAs(001), Ghaisas and Madhukar [1] proposed that islands in registry with the substrate occur before defect formation. In addition, they predicted a critical volume for an island to be coherently strained to the substrate. After this critical volume is exceeded, dislocations or other defects can result. Recently, the existence of strain-induced coherent islands has been verified experimentally in other systems, i.e., Ge/Si(001)[2] and InGaAs/GaAs(001)[3-6], InP/InGaP(001)[7], and InP/GaAs(001)[8] and have all been shown to produce a single type of coherently strained island during growth.

© 1995 Optical Society of America