Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

VUV Laser (157 nm) Chemical Vapor Deposition of High Quality Amorphous Hydrogenated Silicon: "Chemical Mechanism"

Not Accessible

Your library or personal account may give you access

Abstract

Energetic beams provide nonthermal conditions for film synthesis in order to achieve growth processes and material properties that cannot be obtained by using a thermal flux. However, a detailed understanding of the gas phase and surface chemistry responsible for film growth and the resulting material properties has not been achieved for the complex reaction and transport processes involved. In the following it will be shown how the deposition chemistry can be studied using localized initiation of the deposition chemistry by a VUV laser.

© 1995 Optical Society of America

PDF Article
More Like This
Laser-Induced Deposition of Amorphous Silicon: Relations between Chemical Processing and Performance

Peter Hess
TuC1 The Microphysics of Surfaces: Beam-Induced Processes (MSBA) 1991

Epitaxial Growth of B-Doped High Quality Diamond Film on cBN Surface by Chemical Vapor Deposition

G.T. Zou, C.X. Gao, T.C. Zhang, J. Yang, and Z.S. Jin
DGGC487 Applications of Diamond Films and Related Materials (DFM) 1995

Analysis of the Chemical Vapor Deposition of silicon by Intracavity Laser Spectroscopy

J.J. O'Brien and G.H. Atkinson
WD2 Lasers in Material Diagnostics (LMD) 1987

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved