The imperfects in the wafer structure of high power 1.06μm diode laser, which prevents the improvement of laser power, was analyzed. The confinement factor, maximum output power, threshold current and the far-field vertical beam divergence of 1000μm length and 100μ m stripe width laser diodes, which are the main characteristics of semiconductor lasers, are calculated by Lastip simulation software. The results are compared to the general symmetric structure, which manifest that the asymmetric structure enables increasing the output power and minimizing the vertical (perpendicular to the junction plane) beam divergence by decreasing the confinement factor with only a small increase of the threshold current.
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