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The development of the 1.27 µm high responsivity AlInAs Avalanche Photodiodes for 10G-EPON (OLT)

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Abstract

We report the 1.27 µm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).

© 2010 IEEE Communications Society, IEEE Photonics Society, OSA, Telcordia

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