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Explosive Absorption of IR Laser Radiation in Semiconductors

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Abstract

The necessary conditions for hysteresis in optical resonance absorbers with thermal equilibrium are found for arbitrary temperature dependencies on the absorption coefficient and the relaxation rate. The possibility of hysteresis for IR intravalence band semiconductor resonance is shown. The properties of nonlinear auto - waves in the systems with "explosive absorption" is discussed.

© 1991 Optical Society of America

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