Abstract

Generally, TE-mode emission (the transverse electric field is polarized parallel to the active-layer plane) is favored in unstrained semiconductor lasers in comparison with TM-mode emission (the magnetic field is polarized parallel to the active-layer plane) due to a larger reflectivity for the TE wave at the cleaved facets forming the laser cavity. The optical gain delivered from the active medium is the same for both modes, i. e., g_TE = g_TM = g given by g = A (N - N₀) where A is the gain coefficient, N is the carrier density, and N₀ denotes the carrier density required to achieve transparency, g = 0.

© 1992 Optical Society of America