Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Self-Trapped Optical Beams in Semiconductors

Not Accessible

Your library or personal account may give you access

Abstract

Spatial solitons in photorefractive materials have been the subject of recent interest.1-6 Compared with Kerr spatial7 solitons, the most distinctive features of spatial solitons are that they are observed at low light intensities and that trapping occurs in both transverse dimensions. Until now, photorefractive spatial solitons have been observed in the tungsten bronze ferroelectric oxides and in the nonferroelectric sillenite oxides. Several reasons have led us to carry out similar experiments in the photorefractive semiconductor crystal InP:Fe.8,9 First, this material is sensitive in the range of the near-infrared wavelengths used in optical telecommunications. Second, the photorefractive effect in semiconductors has the advantage of a faster response time than that observed in either the tungsten bronze or the sillenite crystal materials. Third, the possibility of monolithic integration with other optoelectronic components (lasers, detectors) is also attractive.

© 1998 Optical Society of America

PDF Article
More Like This
Self-induced trapping of optical beams in semiconductors

M. Chauvet, S. A. Hawkins, G. J. Salamo, Mordechai Segev, D. F. Bliss, and G. Bryant
QThK1 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996

Self-induced trapping of optical beams in photorefractive semiconductors

M Chauvet, SA Hawkins, GJ Salamo, M Segev, DF Bliss, and G Bryant
WL61 International Quantum Electronics Conference (IQEC) 1996

Self-trapping of dark incoherent light beams

Zhigang Chen, Matthew Mitchell, Mordechai Segev, Tamer H. Coskun, and Demetrios N. Christodoulides
NThC.5 Nonlinear Guided Waves and Their Applications (NP) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.