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Influence of High Probe-Power on Multi-Wave Mixing Characteristics of Semiconductor Lasers

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Abstract

Multiwave mixing in semiconductor lasers is of interest for frequency translation and spectral inversion in long-haul optical communication systems and also for the generation of phase conjugate signals which may be used in turn to influence the noise and linewidth properties of other semiconductor lasers. In earlier work [1] attention has been given to the opportunities for achieving enhanced nearly degenerate multiwave mixing through careful cavity design of Fabry-Perot laser structures. In particular the use of asymmetric two-section laser diodes was shown to offer the prospect of broadband laser diode phase conjugate reflection [2] and enhanced tuning [3]. Recently attention has been given also to highly degenerate four-wave mixing in DFB lasers [4].

© 1998 Optical Society of America

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