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Conferences > NLGWP > 1991 > TuC > TuC2

Nonlinear Absorption Processes at Half the Band gap in GaAs Based Semiconductors

A. Villeneuve, G.I. Stegeman, G. Scelsi, C.N. Ironside, J.S. Aitchison, and J.T. Boyd

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Abstract

The utility of the ultrafast nonlinearity in semiconductor waveguides operated below the band gap is limited by two photon absorption β (α = βI where I is the intensity) which does not allow a nonlinear 2π phase shift over one absorption length. [1] However, the two photon coefficient should be zero below half the band gap, potentially allowing for all-optical device operation there.[2,3] Here we report the first measurements of two photon absorption in GaAs waveguides in the vicinity of half the band gap.

© 1991 Optical Society of America

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