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Nonlinearity Enhancement in a Four Layer GaAs/GaAlAs Waveguide

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Abstract

The photorefractive effect in semiconductor materials is attractive for processing low intensity near-infrared optical signals which are important for optical communication and optical computing. Photoinduced large nonlinearity in GaAs materials has been extensively studied in bulk material. A few is desl with optical waveguide of GaAs materials though the signal amplification in GaAs waveguide eia two wavemixing has been proposed.

© 1991 Optical Society of America

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