Abstract

Enhanced coupling of spontaneous emission into a single (lasing) mode in a semiconductor microcavity is expected to feature interesting new physics, such as an ultra-low threshold laser^[1], lasing without inversion^[2] and intensity squeezing at below the oscillation threshold^[3]. Cavity QED effects which have been observed in various atomic systems, however, are not readily observed in semiconductor systems due to a very fast dipole dephasing time and broad, emission linewidth. Only exception is an excitonic emission at cryogenic temperatures. The spontaneous radiation pattern and lifetime were modified by monolithic semiconductor microcavities^[4].

© 1992 Optical Society of America