Efficient Stimulated Raman Conversion in Crystals from 532 and 1064 nm to 500-1150 nm

D. Grebe; R. Macdonald; H. J. Eichler; A.A. Kaminskii; S. N. Bagayev; A. V. Butashin; A. A. Pavlyuk

doi:10.1364/NLO.1996.NPD.3

Nonlinear Optics: Materials, Fundamentals and Applications
Technical Digest Series (Optica Publishing Group, 1996),
paper NPD.3
•https://doi.org/10.1364/NLO.1996.NPD.3

Efficient Stimulated Raman Conversion in Crystals from 532 and 1064 nm to 500-1150 nm

D. Grebe, R. Macdonald, H. J. Eichler, A.A. Kaminskii, S. N. Bagayev, A. V. Butashin, and A. A. Pavlyuk

Nonlinear Optics: Materials, Fundamentals and Applications 1996

Maui, Hawaii United States
8–12 July 1996
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D. Grebe, R. Macdonald, H. J. Eichler, A. A. Kaminskii, S. N. Bagayev, A. V. Butashin, and A. A. Pavlyuk, "Efficient Stimulated Raman Conversion in Crystals from 532 and 1064 nm to 500-1150 nm," in Nonlinear Optics: Materials, Fundamentals and Applications, Technical Digest Series (Optica Publishing Group, 1996), paper NPD.3.

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Abstract

The frequently used Neodymium-doped solid-state laser materials emit in the near infrared. Stimulated Raman scattering and parametric effects are useful to increase the spectral range. Laser materials which show strong Raman conversion are promising materials. A Q-switched Nd³⁺:KGd(WO₄)₂ -laser was demonstrated emitting the laser line at 1067 nm and more than 60 % of the total energy in the first two Stokes lines at 1180.8 nm and 1321.5 nm. [1]

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