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Near band gap time resolved reflectivity studies of ion implanted and MBE grown GaAs:As

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Abstract

Non-stoichiometric GaAs:As with an excess As concentration of approximately 2% has several unique properties including extremely short carrier lifetimes combined with a high mobility, and a large nonlinear optical response with a picosecond recovery time1,2. This combination of properties is believed to arise from either As related defects or Schottky depletion regions surrounding As precipitate inclusions. GaAs:As with an excess As concentration is usually prepared by low temperature molecular beam epitaxy (MBE) (i.e. LT-GaAs), and more recently by As+ ion implantation3. Time resolved pump-probe transient reflectivity measurements can provide information not only on carrier lifetime, but also on the carrier induced nonlinear refractive index change, △n. In this paper, we report the initial results of a comparative study of the transient optical reflectivity for MBE grown LT-GaAs, ion implanted GaAs:As, and semi-insulating GaAs.

© 1996 Optical Society of America

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