Abstract
Non-stoichiometric GaAs:As with an excess As concentration of approximately 2% has several unique properties including extremely short carrier lifetimes combined with a high mobility, and a large nonlinear optical response with a picosecond recovery time1,2. This combination of properties is believed to arise from either As related defects or Schottky depletion regions surrounding As precipitate inclusions. GaAs:As with an excess As concentration is usually prepared by low temperature molecular beam epitaxy (MBE) (i.e. LT-GaAs), and more recently by As+ ion implantation3. Time resolved pump-probe transient reflectivity measurements can provide information not only on carrier lifetime, but also on the carrier induced nonlinear refractive index change, △n. In this paper, we report the initial results of a comparative study of the transient optical reflectivity for MBE grown LT-GaAs, ion implanted GaAs:As, and semi-insulating GaAs.
© 1996 Optical Society of America
PDF ArticleMore Like This
SE Ralph, M Hargis, PW Juodawlkis, C Verber, P Chin, and J Woodall
WI3 International Quantum Electronics Conference (IQEC) 1996
Gong-Ru Lin, Feruz Ganikhanov, Wen-Chung Chen, C.-S. Chang, and Ci-Ling Pan
UTUE6 Ultrafast Electronics and Optoelectronics (UEO) 1995
Ci-Ling Pan, Gong-Ru Lin, Wen-Chung Chen, Feruz Ganikhanov, and C.-S. Chang
CTuL19 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996