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Conferences > NLO > 2007 > WE > WE10

Measurement of Nonlinear Absorption and Refraction in Doped Si Below the Band Edge†

William T. Lotshaw, Dale McMorrow, and Joseph S. Melinger

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Abstract

Quantitative laser single-event effect testing of microelectronics at sub-bandgap wavelengths requires detailed knowledge of material nonlinear optical properties. Nonlinear absorption and refraction in Si were measured by femtosecond z-scans at several wavelengths near the band edge.

© 2007 Optical Society of America

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