Doping Engineered InSe Flakes for High Mobility Phototransistor

Christy Roshini Paul Inbaraj; Christy Roshini Paul Inbaraj; Christy Roshini Paul Inbaraj; Roshan Jesus Mathew; Roshan Jesus Mathew; Raman Sankar; Chih-Hao Lee; Yang-Fang Chen

doi:10.1364/NOMA.2020.NoTu2F.2

OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)
OSA Technical Digest (Optica Publishing Group, 2020),
paper NoTu2F.2
•https://doi.org/10.1364/NOMA.2020.NoTu2F.2

Doping Engineered InSe Flakes for High Mobility Phototransistor

Christy Roshini Paul Inbaraj, Roshan Jesus Mathew, Raman Sankar, Chih-Hao Lee, and Yang-Fang Chen

Novel Optical Materials and Applications 2020

Washington, DC United States
13–16 July 2020
ISBN: 978-1-943580-79-8

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Materials for Photodetectors and Devices (NoTu2F)

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C. R. P. Inbaraj, R. J. Mathew, R. Sankar, C. Lee, and Y. Chen, "Doping Engineered InSe Flakes for High Mobility Phototransistor," in OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF), L. Caspani, A. Tauke-Pedretti, F. Leo, and B. Yang, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper NoTu2F.2.

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Abstract

Sn doped InSe crystal has a reduced oxide phase and enhanced electron mobility. Along with the substrate modification, the mobility enhances to 2560±240 cm² V^-1s^-1. Moreover, it exhibits a piezo-phototronic effect useful for practical implementation

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