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Dependence of As-Se-Te films properties on the plasma parameters

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Abstract

For the first time chalcogenide As-Se-Te films have been prepared by PECVD method in a low-temperature RF (13.56 MHz) non-equilibrium plasma. The effect of the plasma discharge specific energy input and the type of plasma-feed gas on morphology and structure has been studied.

© 2018 The Author(s)

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