Abstract

There has recently been much interest in using optical devices for modulation of optical signals to achieve drop/insert functions in high bit rate time division multiplexed communication systems. Optical semiconductor amplifiers are suited for such applications, in providing optical gain along with switching, in providing high off/on contrast ratios and in operating over a wavelength range directly compatible with diode lasers. This paper reports experimental and theoretical results of high speed electrical modulation of semiconductor laser amplifiers carried out with the aim of determining the maximum switching rate possible using a diode laser amplifier as a gate, the maximum gain and minimum on-time (temporal window during which it transmits signals) possible. Good agreement between experiment and theory has been achieved and it is shown that switching rates as great as 5 GHz and gate "on" times of 150 ps are possible using present amplifier devices.

© 1990 Optical Society of America