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Conferences > OAA > 1991 > WC > WC3

High-power Operation of 1.48 μm GalnAsP/GalnAsP Strained-layer Multiple Quantum Well Lasers

H. Kamei, M. Yoshimura, H. Kobayashi, N. Tatoh, and H. Hayashi

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Abstract

High-power semiconductor lasers emitting at 1.48 μm wavelength have been increasingly important as pumping light sources for Er3+ -doped fiber amplifiers [1, 2]. In this paper we report high power operation of 1.48μm GaInAsP/GalnAsP multiple quantum well (MQW) lasers which utilize strained-layer MQW structures as active layers.

© 1991 Optical Society of America

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