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Saturation Characteristics of Ga1-xInxAs/GaInAsP/InP Tensile-Strained Quantum-Well Semiconductor Laser Amplifiers with Tapered Waveguide Structures

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Abstract

A high power tapered-waveguide traveling-wave semiconductor laser amplifier (TTW-SLA) with Ga1-xInxAs/GaInAsP/InP tensile-strained quantum- well (QW) structure was realized. In spite of the high differential gain in tensile-strained QW active layer, a high saturation power of 18.5dBm (71mW) and a high output power of 20.4dBm (110mW) were obtained due to the compensation effect of the tapered waveguide structure.

© 1993 Optical Society of America

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