Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OAA > 1993 > TUC > TUC2

Saturation Characteristics of Ga1-xInxAs/GaInAsP/InP Tensile-Strained Quantum-Well Semiconductor Laser Amplifiers with Tapered Waveguide Structures

Yidong HUANG, Kazuhiro KOMORI, Koji KUDO, Syamsul El YUMIN, and Shigehisa ARAI

Not Accessible

Your library or personal account may give you access

Abstract

A high power tapered-waveguide traveling-wave semiconductor laser amplifier (TTW-SLA) with Ga1-xInxAs/GaInAsP/InP tensile-strained quantum- well (QW) structure was realized. In spite of the high differential gain in tensile-strained QW active layer, a high saturation power of 18.5dBm (71mW) and a high output power of 20.4dBm (110mW) were obtained due to the compensation effect of the tapered waveguide structure.

© 1993 Optical Society of America

PDF Article
More Like This
Low-threshold-current-density operation of 1.3-µm GaInAsP/InP tensilely strained quantum-well lasers

N. Yokouchi, N. Yamanaka, N. Iwai, and A. Kasukawa
CTuL1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Relative Intensity Noise of 1.3µm-GaInAsP/InP Tensile-Strained Multiple Quantum Well Lasers

N. Yokouchi, Y. Nakahira, N. Yamanaka, N. Iwai, and A. Kasukawa
18D4.4 Optoelectronics and Communications Conference (OECC) 1996

High temperature operation 1.3 μm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikuta
CME1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use