Abstract

InGaAs strained quantum well lasers on GaAs substrates emitting at 980nm are of great interests for the pumping sources of erbium doped optical fiber amplifiers (EDFA). In the previous report, we have demonstrated aluminium free 980nm InGaAs strained quantum well lasers for the first time [1]. The advantage of this system is high endurance to the surface oxidation under fabrication process, high power operation, to name a few. To make good use of this advantage, it is expected long term reliability for practical use, which was confirmed by the high temperature aging tests of aluminum free lasers with no facet coating [2,3].

© 1993 Optical Society of America