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Conferences > OAA > 2003 > WB > WB3

1.3 µm Travelling-Wave GaInNAs Semiconductor Optical Amplifier

Jun-ichi Hashimoto, Kenji Koyama, Tsukuru Katsuyama, Yasuhiro Iguchi, Takashi Yamada, Shigenori Takagishi, Masashi Ito, and Akira Ishida

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Abstract

Travelling-wave GaInNAs-SOA was realized for the first time. The peak chip gain of 14dB and 3-dB gain bandwidth of 49 nm were obtained. The Gain dependence of the GaInNAs-SOA on temperature was much smaller than that of the conventional InP-based-SOA.

© 2003 Optical Society of America

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